摘要
硫化铅红外探测器也叫硫化铅光敏电阻器。通过化学沉淀方法在基底上形成PbS薄膜,薄膜必须经过敏化处理才具有相当的灵敏度,敏化条件不同,直接影响敏化的效果,探测器的光电性能差异很大。为了达到最佳敏化,针对影响敏化结果的有关因素,相应改变敏化条件进行大量实验,分析不同敏化条件处理后PbS薄膜的光电性能参数,确定了短时高温的最佳敏化工艺条件,同时浅析了硫化铅红外探测器的敏化过程和规律。
PbS photoresistor also is called PbS infrared detector, PbS film is formed on the substrate by chemical precipitation. The film has considerable sensitivity after the sensitizing treatment. Sensitization process directly affects the effect of sensitizing, and the properties of photoelectric detector. In order to achieve the best sensitization process, a lot of experiments were made based on a variety of relevant factors and different sensitization conditions. Determined the best sensitization process, which is high-temperature and short-time, through analyzing the photoelectric performance parameters of PbS photoresistor after different sensitizing treatment. At the same time, analyzed the sensitization process and regulation of PbS photoresistor.
出处
《电子工艺技术》
2017年第1期45-48,共4页
Electronics Process Technology
关键词
PBS
敏化
灵敏度
暗阻
PbS
sensitization
sensitivity
dark resistance
