摘要
本文研究了三种不同种类的磨料对SiC单晶片去除率的影响。最终选用金刚石磨料作为SiC单晶片的化学机械抛光磨料。结果表明:固结磨料CMP的材料去除率是游离磨料的3倍以上,固结磨料抛光垫,可大幅度提高材料去除效率。
In this paper, three different types of abrasive which were chosen were used for the research of material removal rate（MRR） of SiC single crystal. Finally, Diamond abrasive which is considered was the most suitable for chemical mechanical polishing（CMP） abrasive of SiC Crystal Substrate. And results from the test procedure, the FA-CMP surface has scratches after more technical problems for the polishing pad, the surface damage is relatively free of abrasive chemical mechanical polishing is more serious.
出处
《电子测试》
2016年第12期157-157,151,共2页
Electronic Test
关键词
固结磨料
SIC晶体
化学机械抛光
材料去除率
FA-CMP
SiC single crystal
chemical mechanical polishing
material removal rate
