摘要
In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer（EBL）and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.
In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer（EBL）and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.
作者
Min Guo
Zhi-You Guo
Jing Huang
Yang Liu
Shun-Yu Yao
郭敏;郭志友;黄晶;刘洋;姚舜禹(Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China)
基金
Project supported by the Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province,China(Grant No.2014B010121001)
the Special Funds for Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006)
the Special Funds for the Innovation of Forefront and Key Technology of Guangdong Province,China(Grant No.2014B010119004)
the Science and Technology Program Project for High Conversion Efficiency and Application of Direct Driver High-end LED Chip of Guangdong Province,China(Grant No.2013B010204065)
the Special Project for Key Science and Technology of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204)
the Science and Technology Program Project in Huadu District of Guangzhou City,China(Grant No.HD15PT003)
