摘要
对电荷耦合器件(CCD)硅基底的光照能量分布进行了建模分析和实验研究。使用原子力显微镜和扫描电子显微镜获取了CCD的关键光学参数,即微透镜表面函数和二氧化硅增厚层厚度。模拟了垂直入射平面光在硅基底表面的能量分布,并与飞秒激光辐照损伤CCD的实验图像进行了比对,二者吻合良好。研究结果表明,微透镜与二氧化硅增厚层的共同作用使得激光能量几乎完全辐照在感光区,激光能量呈哑铃形分布。
The distribution of light field on silicon substrate of charge coupled device（CCD）is analyzed via mathematical modeling and experimental research.The atomic force microscope and scanning electron microscope are used to get the critical optical parameters,i.e.the micro lens surface function and the thickness of silicon dioxide thickening layer.The energy distribution of vertical incident planar light on the silicon substrate is simulated and it is compared with the experimental images of femtosecond laser illumination induced damages to CCD and they are consistent with each other.The research results shown that the coaction of micro lens and silicon dioxide thickening layer makes the laser energy almost illuminate at the sensing zone and the laser energy shows a dumbbell-shaped distribution.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2016年第12期155-159,共5页
Acta Optica Sinica
关键词
激光技术
脉冲激光
电荷耦合器件
光场
折射定律
菲涅耳公式
laser technique
pulsed laser
charge coupled device
light field
Snell′s law
Fresnel formula
