摘要
针对不同制备工艺对薄膜的影响,采用旋涂-蒸镀工艺相结合的方法,制备了以Cd Se/Zn S量子点作为发光层、poly-TPD作为空穴传输层,Alq3作为电子传输层的红光量子点发光二极管。研究了量子点材料的发光特性、量子点器件电致发光机理,分析了旋涂、蒸镀工艺的成膜特点。实验结果表明,器件具有色纯度高、开启电压低、漏电流小等特点。
Based on influence of different preparation methods on film quality, red light quantum dot light-emitting diodes （QLED）were fabricated through spin coating and vacuum evaporation technology, using CdSe/ZnS as light emitting layer, poly-TPD as hole transport layer, and Alq3 as electron transport layer. Luminescence characteristics of quantum dot material and luminous mechanism of QLED device were analyzed as well as the features of spin coating and vacuum deposition films. Experiment results show that the QLEDs fabricated have high color purity and low turn-on voltage with a low leakage current.
出处
《北京信息科技大学学报（自然科学版）》
2016年第6期52-56,共5页
Journal of Beijing Information Science and Technology University
基金
北京市自然科学基金资助项目(4122028)
北京市重点学科建设项目(PXM2014-014224-000018)
北京市研究生联合培养基地建设项目(71C1411017)
关键词
量子点发光二极管
电致发光
旋涂
蒸镀
quantum dot light-emitting diode
electroluminescent
spin coating
vacuum deposition
