摘要
结合实验数据详细地分析了基于不同粒径硅溶胶磨料的抛光液对铜化学机械平坦化(CMP)性能的表征。研究表明,磨料粒径是决定CMP效率和最终晶圆表面平坦化质量的重要因素。分析了化学机械抛光过程中的机械作用及质量传递作用。通过在铜光片及图形片上进行实验验证,结果表明,在低磨料质量分数条件下,当磨料粒径为60 nm时,可获得最优的平坦化效果,铜膜抛光速率可达623 nm/min,抛光后晶圆片内非均匀性和碟形坑高低差分别降为3.8%和75.1 nm,表面粗糙度为0.324 nm。在此基础上,为进一步建立磨料颗粒的微观动力学模型提出了一些理论基础上的建议。
Combined with the experiment data,the characterization of the slurries with different colloidal silica abrasive particle sizes on the performance of Cu chemical mechanical planarization（CMP）was analyzed in detail.The research indicates that the abrasive particle size is a significant factor to determine the efficiency of CMP and the final planarization quality of the wafer surface.The mechanical action and mass transfer effect in the chemical mechanical polishing process were analyzed.The validation experiments on the copper blanket wafer and pattern wafer show that under the condition of low abrasive mass fraction,when the abrasive particle size is 60 nm,the optimal planarization effect can be obtained.The copper film polishing rate can reach623 nm/min.The within-wafer-nonuniformity and the step height of dishing pits after polishing decrease to 3.8% and 75.1 nm,respectively,and the surface roughness is 0.324 nm.Furthermore,some suggestions to the theoretical basis for the further establishment of the microscopic kinetic model of abrasive particles were put forward.
出处
《微纳电子技术》
北大核心
2017年第1期58-64,共7页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308-003
2014ZX02301003-007)
河北省青年自然科学基金资助项目(F2015202267)
河北省自然科学重点资助项目(ZD2016123)
天津市自然科学基金资助项目(16JCYBJC16100)
关键词
化学机械平坦化(CMP)
磨料粒径
机械作用
质量传递
平坦化性能
chemical mechanical planarization（CMP）
abrasive particle size
mechanical action
mass transfer
planarization performance
