摘要
目的：探讨癫癎患者脑电图（EEG）异常部位与脑磁共振（MRI）异常部位的相关性。方法：收集2015年1月-2016年8月在南京脑科医院住院的290例癫癎患者的EEG及MRI结果进行回顾性分析。结果：EEG癫癎波检出率在MRI异常组为98．5％，显著高于MRI正常组（79．5％）（P〈0．05）。耐药性癫癎的发生率在MRI异常组（26．1％）显著高于MRI正常组（10．3％）（P〈0．05）。MRI异常部位与EEG异常部位的重合率在海马硬化组（95％）和脑发育不良组（84．6％）显著高于其它各组。耐药性癫癎的发生率在脑发育不良组（50％）及海马硬化组（30％）高于其他各组。结论：癫癎患者在MRI上显示海马硬化及脑发育不良时，其作为癫癎病灶存在的可能性极大，且耐药性癫癎的发生率高。
Objective：To investigate the correlation between the abnormities of EEG and the abnormity of MRI in patients with epilepsy. Methods：To retrospectively, to analyze VEEG and MRI measurement outcome of 290 patients with epilepsy who were hospitalized at Nanjing Brain Hospital from January, 2015 to August, 2016. Results：The abnormity rate of EEG in MRI abnormal group （98.5%） was significantly higher than that in MRI normal group （79.50%） （P〈0.05）. The incidence of drug-resistant epilepsy in MRI abnormal group （26.1%） was significantly higher than that in the MRI normal group （10.3%） （P〈0.05）. The coincidence rate of hippocampal sclerosis group （95%） and brain dysplasia group （84.6%） was higher than those of other groups （P〈0.05）. The incidence of refractory epilepsy hippocampal sclerosis group （30%） and brain dysplasia group （50 %） was higher than other groups （P〈 0, 05）. Conclusion：The presence of hippocampal sclerosis and brain dysplasia as lesions in epilepsy is of great possibility, and the incidence of drug-resistant epilepsy is rather high.
出处
《癫痫与神经电生理学杂志》
2016年第6期333-335,338,共4页
Journal of Epileptology and Electroneurophysiology(China)
