摘要
现代电子器件的大规模集成电路被植入在半导体之上,这些半导体被称为衬底,通过不同的掺杂,得到不同的电路组件。在制作军用高功率微波器件时,需要研究新材料和新工艺。相控阵雷达是基于特殊高功率微波器件的装备。
The large scale integrated circuit of the modern electronic device is implanted on the semiconductor which is called as the substrate and the different circuit components are obtained by different doping. New materials and techniques are need to be studied in the manufacture of military high power microwave devices. Phased array radar is based on the equipment of these special devices.
出处
《集成电路应用》
2016年第12期63-64,共2页
Application of IC
关键词
相控阵雷达
宽禁带半导体
碳化硅
phased array radar, wide band gap semiconductor, SiC
