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基于新型双频匹配电路的双频低噪声放大器设计

Design of Dual-Band Low Noise Amplifier Based on Novel Dual-Band Matching Electric Circuit
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摘要 为提高现代无线通信系统的频谱利用率,降低系统成本,对双频低噪声放大器进行了深入研究,提出一种利用新型双频匹配结构来设计双频低噪声放大器的方法。这种双频匹配结构由实阻抗双频变换器和双枝节线结构双频匹配电路组成,双枝节线结构双频匹配电路能够实现双频点复阻抗到实阻抗的匹配,实阻抗双频变换器能够实现两个频段上的实阻抗匹配。仿真结果表明这种方法设计的双频低噪声放大器电路结构简单、成本低廉、性能优良且易于加工,两个中心频率可任意选择,具有较高的实用价值。 To improve the spectrum utilization efifciency and reduce cost, this paper makes further research in dual-band low noise ampliifer. A novel dual-band matching structure is proposed to design the ampliifer. The proposed dual-band matching structure consists of real impedance dual-band converter and double stub line structure. And the double stub line structure can convert complex impedance to real impedance in dual band, while the real impedance dual-band converter can realize real impedance matching in dual band. Moreover, the simulation results show that the dual-band low noise ampliifer is of simpler structure, fewer cost, easier processing and better function. Due to its two free center frequencies, it will result in higher practical value.
出处 《移动通信》 2016年第20期88-91,96,共5页 Mobile Communications
关键词 双频 低噪声 匹配 传输线 阻抗变换 dual-band low noise match stub line impedance converter
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  • 1殷吉辉,杨华中.一种双频段CMOS低噪声放大器[J].微电子学,2007,37(3):403-406. 被引量:5
  • 2Liang Q Q,Niu G F,Cressle J D,et al.On the Optimization and Desigh of SiGe HBT Cascade Low-Noise Amplifiers[J].Solid-State Electronics,2005,49:329-341. 被引量:1
  • 3Liang Q Q,Niu G F,Cressler J D,et al.Geometry and Bias Current Optimization for SiGe HBT Cascade Low-Noise Amplifiers[C]//Proc of IEEE RFIC,2002:407-410. 被引量:1
  • 4Comeau J P,Morton M A,Kuo W M L,et al.A Silicon-Germanium Receiver for X-Band Transmit/Teceiver Radar Modules[J].IEEE JSSC,2008,43(9):1889-1896. 被引量:1
  • 5Gil I,Cairo I,Sieiro J J,et al.Low-Power Single-To-Differential LNA at S-Band Based on Optimized Transformer Topology and Integrated ESD[J].IEEE E L,2008,44(3):189-199. 被引量:1
  • 6Weinreb S,Bardin J C,Mani H.Design of Cryogenic SiGe Low-Noise Amplifier[J].IEEE Transactions on MTT,2007,55(11):2306-2312. 被引量:1
  • 7Ismail A,Abidi A.A 3~10 GHz Low-Noise Amplifier with Wideband LC-Ladder Matching Network[J].IEEE JSSC,2004,39(12):2269-2277. 被引量:1
  • 8Sivonen P,Kangasmaa S,P(a)rssinen A.Analysis of Packaging Effects and Optimization in Inductively Degenerated Common-Emitter Low-Noise Amplifiers[J].IEEE Transactions on MTT,2003,51(4):1220-1226. 被引量:1
  • 9Daniel L K,Manish S,Nihal G,et al.A Concurrent Multi-Band LNA for Multi-Standard Radios[C]//Proc of IEEE ISCS,2005:3982-3985. 被引量:1
  • 10Vojkan V,Johan V D T,Eric H,et al.Fully-Integrated DECT Bluetooth Multi-Band LNA in 0.18 μm CMOS[C]//Proc of IEEE ISCS,2004,565-568. 被引量:1

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