摘要
使用自行研制的频率为2.45 GHz的TYUT型MPCVD装置,以H2和CH4为气源,在功率为8 k W、基片温度为1000℃、气体流量为100-800 sccm条件下,进行了直径为65 mm的大面积金刚石膜的沉积实验。使用扫描电镜、X射线衍射仪、数字千分尺和Raman光谱仪等仪器分别对金刚石膜的表面形貌、取向、厚度和品质进行了表征。实验结果表明,气体流量的变化会对金刚石膜的晶粒尺寸,晶体取向,沉积速率,厚度均匀性和品质产生较大的影响。气体流量在300-600 sccm范围内制备的金刚石膜才兼具晶粒尺寸均匀性好、表面缺陷少和品质高的优点。
Diamond films of 65 mm in diameter were deposited by a self-designed 2. 45 GHz TYUT-type microwave plasma chemical vapor deposition （ MPCVD） system with input power of 8 kW and substrate temperature of 1000℃ . A mixture of CH4 and H2 was used as gas source, and the effect of the gas flow rates on the diamond deposition was investigated. The surface morphologies, grain orientation, thickness and the quality of the diamond films were characterized by scanning electron microscopy, X-ray diffractometer, digital micrometer and Raman spectrometer, respectively. The results indicate that large- area diamond films of 65 mm in diameter could be deposited at all gas flow rates from 100 seem to 800 seem. However, the grain size, grain orientation, thickness uniformity and quality of the diamond films were strongly affected by the gas flow rates. High quality diamond films with uniform grain size and fewer defects could be obtained at gas flow rates range from 300 seem to 600 seem.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2016年第10期2359-2363,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(51474154
11405114
51601124)
山西省回国留学人员科研资助项目(2015-034)
