摘要
提出了一种可应用于高压绝缘栅双极型晶体管(IGBT)模块的新型阳极短路IGBT结构。在n型截止区设计一个p型阻挡层,增加了集电极区域的短路电阻,从而完全消除传统阳极短路型IGBT开启时正向导通压降的回跳效应。p型阻挡层的位置对消除导通压降回跳现象至关重要。详细讨论了p型阻挡层的高度、宽度和水平位置对器件电学特性的影响。仿真结果表明,将一个传统结构的阳极短路型IGBT和一个具有高度为4μm、宽度为3μm的p型阻挡层的新型阳极短路型IGBT结构对比,在门极驱动电压为15 V的情况下,器件的正向导通压降从传统的4.60 V下降到3.95 V,关断时间从354 ns减少到305 ns。所提出的新结构能进一步有效折中IGBT器件正向压降与关断时间的矛盾关系。
A novel structure of anode-shorted insulated gate bipolar transistor （IGBT） which can be applied to high-voltage IGBT modules was proposed. With the p-barrier layer in n-buffer zone, the short resistance of the collector region increased, therefore the snapback effect of forward conduction voltage drop when the traditional anode-shorted IGBT turned on was completely eliminated. The location of the p-barrier layer was critical for the elimination of the conduction voltage drop snapback phenomenon. The influence of the height, width and horizontal position of the p-barrier layer on the electrical proper- ties of the device were discussed in detail. The simulation results show that, comparing the anode-shorted IGBT of traditional structure with the novel device with p-barrier height of 4 μm and width of 3 μm, the forward conduction voltage drop decreases from g. 60 V to 3.95 V and the turn-off time drops from 354 ns to 305 ns at the gate driving voltage of 15 V. The proposed new structure presents the optimized trade-off performance between forward drop voltage and turn-off time.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第9期679-683,共5页
Semiconductor Technology
基金
国家高技术研究发展计划(863计划)资助项目(2014AA052401)
国网科技资助项目(SGRI-WD-71-14-005)
