摘要
通过在有机发光二极管(OLED)的阳极与空穴传输层NPB之间加入m-MTDATA作为缓冲层来研究缓冲层对器件性能的影响。制备了ITO/m-MTDATA(dnm)/NPB(40-dnm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)、ITO/MoO3(15nm)/NPB(25nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)结构的器件,研究不同m-MTDATA厚度对OLED发光亮度、电流密度、电流效率等性能的影响。实验发现,当缓冲层的厚度为15nm时,器件的启亮电压从未加缓冲层的13V降到了9V,最大发光亮度从未加缓冲层的5900cd/m2增加到16300cd/m2,是原来的2.76倍。最高的电流效率也由未加缓冲层的1.8cd/A变为3.5cd/A,是原来的1.94倍。然后在器件的氧化铟锡(ITO)与NPB之间插入了厚度为15nm的MoO3缓冲层。与同厚度的m-MTDATA器件相比,插入MoO3缓冲层器件的启亮电压降低为8V,最大亮度为13320cd/m2,最大电流密度为6030.74A/m2,最大的电流效率为3.06cd/A。
This research investigates the effect of buffer layer on the performance of organic light emitting diodes （OLED） by adding m-MTDATA as buffer layer between anode and hole transport layer NPB. The devices with ITO/m-MTDATA（d nm）/NPB（40-d nm）/Alqa （70 nm）/LiF（0.5 nm）/Al（40 nm） and ITO/ MoO3 （15 nm）/NPB （25 nm）/Alq3 （70 nm）/LiF（0.5 nm）/Al（40 nm） structures are prepared. The effects of m-MTDATA thickness on OLED brightness, current density, current efficiency and other properties are studied. It is found that the turn-on voltage of the device reduces from 13 V to 9 V when the thickness of the buffer layer is 15nm, and the maximum brightness of the device increases from 5900 cd/m2 to 16300 cd/m~ , which is about 2.76 times as much as that of the device without buffer layer. The highest current efficiency also increases from 1.8 cd/A to 3.5 cd/A, which is 1.94 times as much as the device without buffer layer. Then the MoOa buffer layer with the thickness of 15 nm is inserted in the device as a buffer layer between indium tin oxide（ITO） and NPB. Compared to m-MTDATA device with the same thickness, the turn-on voltage of the device with MoO3 buffer layer declines to 8 V, the maximum brightness is 13320 cd/m2 , the maximum current density is 6030.74 A/m2 , and the maximum current efficiency is 3.06 cd/A.
出处
《激光与光电子学进展》
CSCD
北大核心
2016年第8期253-258,共6页
Laser & Optoelectronics Progress
基金
国家自然科学基金(61275147
61405085)
山东省科技攻关计划(2010GGX10127)
山东省自然科学基金(ZR2012AL11
ZR2013EML006)
山东省"泰山学者"建设工程专项经费
聊城大学重点科研基金
关键词
光学器件
有机发光二极管
缓冲层
发光亮度
电流效率
optical devices
organic light emitting diodes
buffer layer
luminance
current etticiency
