摘要
等离子喷涂层片是形成涂层的基本单元,研究层片的形貌及显微结构对涂层的工艺优化和质量控制都具有重要意义。本研究在1Cr13不锈钢基底上采集了等离子喷涂的Ni层片,采用扫描电子显微镜(SEM)和电子背散射衍射(EBSD)研究了基底温度对层片形貌、晶粒大小和晶体取向分布的影响,并由晶粒大小计算了层片和基底间的接触热阻。研究结果表明:300 K基底上采集的层片为飞溅状,层片晶粒尺寸和接触热阻沿着径向方向变化不大,平均值分别为2.75μm和2.98×10^(-6)m^2·K·W^(-1)。在573 K基底上采集的层片近似圆盘状,层片晶粒尺寸沿着径向近似线性增大,中心和边缘处分别为0.92和1.98μm;接触热阻沿着径向逐渐增大,中心和边缘分别为9.80×10^(-7)和2.29×10^(-6)m^2·K·W^(-1)。两种基底上采集的层片都存在<100>织构。由于573 K基底上采集的层片冷却速度快,具有更强的<100>织构。
In plasma spraying process,the splats are building blocks of the whole coating. Thus,studies on the morphology and microstructure of splats are essential to coating process optimization and quality control. In this paper,the effect of substrate temperature（ Ts） on the morphologies,grain size and texture of plasma sprayed Ni splats collected on 1Cr13 stainless steel was investigated by scanning electron microscope（ SEM） and electron-backscattered diffraction（ EBSD）,while the thermal contact resistance between splat and substrate was calculated according to the grain size. For Ts= 300 K,the splat morphology was splashing shape. The grain size and thermal contact resistance had few changes along the radial direction of splat,and their average values were 2. 75 μm and 2. 98× 10^（-6）m^2·K·W^（-1）,respectively. On the contrary,when the splat was at Ts= 573 K,it showed disk-like type. The grain size increased linearly along the radial direction of splat,and the values of central and peripheral region were 0. 92 and 1. 98 μm,respectively. Also,the thermal contact resistance increased gradually along the radial direction of splat,and the values of central and peripheral region were 9. 80 × 10^（-7） and 2. 29 × 10^（-6）m^2·K·W^（-1）,respectively. The splat collected at both substrate temperatures had 〈100 〉texture. Due to the higher cooling rate,the splat at Ts= 573 K had stronger 〈100〉 texture than that at Ts= 300 K.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2016年第8期751-755,共5页
Chinese Journal of Rare Metals
基金
福建省质量技术监督局科技项目(FJQI2013077)资助
关键词
等离子喷涂
基底温度
层片
显微组织
织构
plasma spraying
substrate temperature
splat
microstructure
texture
