期刊文献+

HgCdTe光导探测器比探测率的特性分析

Characteristic analysis on D* of HgCdTe photoconductive detector
下载PDF
导出
摘要 从信号和噪声两个方面分析了HgCdTe光导探测器自身温度变化对比探测率D*的影响,并在理论层面上对比探测率的表达式进行了推导。理论分析表明:温度变化影响载流子的浓度和寿命,从而影响信号与噪声的大小,降低探测器的温度可使得探测器的比探测率得到一定程度的提高。通过MATLAB仿真,分析了组分和厚度的变化对Hg_(1-x)Cd_xTe光导器件的截止波长和峰值波长的影响情况,为使HgCdTe光导探测器在工作波段内有较高的探测响应,当探测器工作在某一温度,应选择合适的组分x和厚度d。 The effects of temperature variation on D*of HgCdTe photoconductive detector are analyzed from signal and noise,and the expression of D*is deduced theoretically. Theoretical analysis shows that temperature change affects the concentration and lifetime of the carrier,which then has an influence on signal and noise,so D*can be improved in some degree by reducing the temperature of the detector. Through MATLAB simulation,the influence of changes of component and thickness on cutoff wavelength and peak wavelength of Hg1-xCdxTe photoconductive detector are analyzed. In order to get a higher detection response of HgCdTe photoconductive detector in the working waveband,the appropriate component x and thickness d should be selected when the detector operates in a certain temperature.
出处 《激光与红外》 CAS CSCD 北大核心 2016年第7期838-842,共5页 Laser & Infrared
关键词 光导型探测器 温度 比探测率 波长 HGCDTE photoconductive detector temperature specific detectivity wavelength HgCdTe
  • 相关文献

参考文献9

二级参考文献53

  • 1苏启顺.红外系统设计中探测器1/f噪声对D值影响的计算[J].红外与激光技术,1995,24(4):42-46. 被引量:2
  • 2张永刚,顾溢,朱诚,郝国强,李爱珍,刘天东.短波红外InGaAs/InP光伏探测器系列的研制[J].红外与毫米波学报,2006,25(1):6-9. 被引量:13
  • 3李春来,吴刚,刘银年,王建宇.低温光学系统辐射特性研究[J].激光与红外,2006,36(12):1146-1148. 被引量:9
  • 4(美)罗伯特A威特 李景威等(译).频谱和网络测量[M].北京:科学技术文献出版社,1997.. 被引量:1
  • 5G H Olsen, A M Joshi, V S Ban, et al. Multiplexed 256 element InGaAs detectors for 0.8 - 1.7μm room-temperature operation[ J]. SPIE, 1988,972:279 - 285. 被引量:1
  • 6G H Olsen, A M Joshi, et al. Current status of InGaAs detector arrays for 1-3μm [J]. SPIE, 1991, 1540: 596 - 605. 被引量:1
  • 7M DHondt, I Moerman, P Demeester. Dark current optimization for MOVPE grown 2.5 μm wavelength InGaAs photodetectors [ J ]. Electronics Letters, 1998, 34 ( 9 ) : 910 -912. 被引量:1
  • 8P Merken, L Zimmermann, J John, et al, Extended-wavelength InGaAs-on-GaAs infrared focal-plane array[J]. Electronics Letters,2002,38 (12) :588 - 590. 被引量:1
  • 9Yonggang Zhang, Yi Gu, Cheng Zhu, et al. Gas source MBE grown wavelength extended 2.2μm and 2.5μm InGaAs PIN photodetectors [ J].Infrared Physics & Technology,2006,47:257 - 262. 被引量:1
  • 10A M Joshi, G H Olsen, S Mason, et al. Near-infrared (1 - 3μm) InGaAs detectors and arrays: crystal growth, leakage current and reliability [ J ]. SPIE, 1993, 1715: 585 - 593. 被引量:1

共引文献30

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部