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衬底温度对蒸汽辅助沉积法制备钙钛矿薄膜微观结构的影响 被引量:2

Influences of substrate temperature on the structure of the perovskite films prepared using a vapor-assisted solution process
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摘要 通过调控薄膜生长衬底温度,提出了一种改良的蒸汽辅助沉积法制备有机-无机混合钙钛矿薄膜,可以更为可控优化薄膜生长条件。用同步辐射掠入射X射线衍射(Grazing Incidence X-ray Diffraction,GIXRD)结合扫描电镜(Scanning Electron Microscope,SEM)、紫外可见吸收谱(UV-Visible Absorption Spectrum)等表征方法证明衬底温度对制备的钙钛矿薄膜质量具有重要的作用:较低的衬底温度(约70?C)有助于钙钛矿晶粒的形成,其结晶性、晶面择优生长取向均较好,同时具有较高的光吸收性能;当衬底温度升高时(100?C、125?C),所制备的钙钛矿薄膜结晶性变弱,晶体择优生长取向明显变差,光吸收性能随之下降。研究结果有助于进一步优化蒸汽辅助沉积法制备钙钛矿薄膜工艺。 Background: The crystallinity and morphology ofperovskite thin film have decisive roles on its device performance in the perovskite solar cells. The perovskite thin film can be prepared using a vapor-assisted solution process, which needs to be thoroughly investigated to improve its crystallinity and morphology. Purpose: We attempt to study the influence of the substrate temperature on the crystallinity and morphology of perovskite thin film prepared using the vapor-assisted solution process. Methods: The perovskite thin films were prepared using a modified vapor-assisted solution process with different substrate temperatures, which were characterized by grazing incidence X-ray diffraction (GIXRD), UV-visible absorption spectrum, and scanning electron microscope (SEM).Results: GIXRD analysis shows that the perovskite thin film prepared via the vapor-assisted solution process with a low substrate temperature of 70 ℃ exhibits favorite crystallinity with better preferential crystalline orientation than those prepared at higher temperatures (100 ℃ and 125 ℃). UV-Visible absorption spectra show the optical absorption intensity of perovskite thin film prepared with a low substrate temperature of 70 ℃ is the largest. SEM results support the GIXRD results, which show the perovskite crystal size and the film morphology change dramatically with increasing substrate temperature. Conclusion: Based on the above results, the crystallinity, morphology and the optical absorption of perovskite thin film prepared using the modified vapor-assisted solution process are sensitive to the substrate temperature during the preparation. In general, a low substrate temperature in the modified vapor-assisted solution process is more desirable to prepare perovskite films with good crystallinity and hieh ottical absorotion.
出处 《核技术》 CAS CSCD 北大核心 2016年第6期21-27,共7页 Nuclear Techniques
基金 国家自然科学基金(No.11175239 No.11405253 No.11405257 No.U1332205) 上海市科委项目(No.14DZ2261200)资助~~
关键词 同步辐射掠入射X射线衍射 钙钛矿薄膜 改良的蒸汽辅助沉积法 衬底温度 GIXRD, Perovskite thin film, Modified vapor-assisted solution process, Substrate temperature
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