摘要
在流态化CVD法生产多晶硅的过程中发生了无数的均相反应和异相反应,均相反应十分的复杂,生成的无定形硅粉中含有氢键,是硅粉发生爆炸的关键因素。主要介绍了均相反应和异相反应的反应机理和主要影响因素(反应温度、入口硅烷浓度、进料气速、颗粒的平均直径、反应压力、床层高度等)对多晶硅和硅粉的影响规律。
Countless of reactions including homogeneous reactions and heterogeneous reactions happen in the process of polysilicon production with fluidization CVD（Chemical Vapor Deposition） technology. Homogeneous reaction is very complex,generated amorphous silicon powder containing hydrogen bond is a key factor for silicon powder explosion. In this paper, reaction mechanisms of the homogeneous reaction and the heterogeneous reaction were introduced as well as influence rule in factors including reaction temperature, silane concentration, gas velocity, average diameter of particles, reaction pressure, and bed layer height.
出处
《当代化工》
CAS
2016年第5期980-982,共3页
Contemporary Chemical Industry
基金
国家自然科学基金
项目号:21276132
关键词
流化床
化学气相沉积
多晶硅
硅粉
flnuidized bed
chemical vapor deposition
polycrystalline silicon
silicon powder
