摘要
为提高探测器级高纯锗多晶材料的制备效率,开展对锗材料多次区熔过程的参数优化的数值模拟.利用分凝原理对高纯锗多晶材料制备的区熔过程进行数值模拟,针对杂质分凝系数小于1的情况,比较了不同区熔速度下,单次和多次区熔的提纯效果.结果表明,虽然速度越慢单次区熔效果越好,但对多次区熔的累计效果要采用相对快速多次的方法,以实现相同提纯效果下总时间最短,即多次累计的区熔效率最高.给出了区熔速度的优化方法,以指导实验提高区熔效率.
In order to improve the high-purity germanium（ HPGe） preparation efficiency,numerical simulation on parameters optimization for multiple zone melting process of germanium materials is carried out. By using the principle of segregation,the zone melting process of polycrystalline materials is simulated numerically. For the segregation coefficient of less than 1,the refining effects of both single and multiple zone melting processes at different zone melting speeds are studied comparatively. Results show that the slower the zone speed,the better the refining effect of single zone melting. However,the cumulative refining effect of multiple zone melting should be investigated in a relatively fast and multi-pass way. It thus achieves the same effect with less total time,resulting in a higher cumulative efficiency. This paper provides a method to optimize the zone melting speed for guiding experiments and improving the refining efficiency.
出处
《深圳大学学报（理工版）》
EI
CAS
CSCD
北大核心
2016年第3期248-253,共6页
Journal of Shenzhen University(Science and Engineering)
基金
国家自然科学基金资助项目(11575118)~~
关键词
半导体
高纯锗制备
高纯锗探测器
区熔提纯
杂质浓度
数值模拟
参数优化
semiconductor
high-purity germanium preparation
high-purity germanium detector
zone refining
impurity concentration
numerical simulation
parameter optimization
