摘要
结合量子力学模型、偶极子转换理论和金属氧化物半导体结构的半导体物理理论,对描述金属层-绝缘层-铁电层-绝缘层-半导体(MIFIS)结构电学性能的模型进行了改进。该模型考虑了半导体表面的界面捕获态,利用该模型,研究了界面捕获态对半导体表面势-电压(φSi-V)特性和MIFIS结构低频电容-电压(C-V)特性及记忆窗口的影响。结果显示,随着界面捕获态密度的增加,φSi-V和C-V特性曲线沿电压正方向移动并发生变形,记忆窗口逐渐减小,即界面捕获态密度越大,MIFIS结构的电学性能越差。该研究在MIFIS结构器件的设计和制作方面具有指导意义。
Combining the quantum mechanical model,dipole switching theory and semiconductor physics of MOS structure,an improved model was proposed to describe the electrical properties of metalinsulator-ferroelectric-insulator-semiconductor（ MIFIS） structure. The interface traps were considered in the model. Using the model,the effects of interface traps on the surface potential-voltage（ φSi-V） property of semiconductor and the low frequency capacitance-voltage（ C-V） property and memory window of MIFIS structure were studied. The results show that the φSi-V and C-V curves are shifted toward the positive-voltage direction and deformed with the increase of the interface trap states densities. That is the larger the interface trap states densities,the worse the electrical properties of the MIFIS structure. It is expected to provide some guidances to the design and fabrication of MIFIS structure devices.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第5期366-370,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(51502087)
湖南省自然科学基金资助项目(14JJ6040)
