摘要
磁控电抗器(MCR)因调节灵活等优点在电力系统无功补偿及限制过电压等方面得到了广泛应用,但响应速度较慢限制了MCR的应用。为提高磁控电抗器的响应性能,分析了MCR的工作原理及响应机理,并设计了一种MCR快速响应结构,其利用IGBT电路控制直流励磁电流大小及方向,实现快速励磁与去磁。仿真和试验结果表明,该快速响应结构可使MCR的励磁和去磁时间限制在30 ms以内,有效地提升了MCR的响应性能。
Due to the control flexibility,MCR（Magnetically Controlled Reactor） is widely used in the reactivepower compensation,overvoltage limitation,etc.,but the slow response limits its applications. Its working principle and response mechanism are analyzed and a fast response structure is designed to improve its response speed,which adopts IGBT circuit to control the magnitude and direction of DC excitation current for fast excitation and demagnetization. The simulative and experimental results show that,with the designed structure,the excitation time and demagnetization time of MCR are both less than 30 ms,effectively enhancing the response performance of MCR.
出处
《电力自动化设备》
EI
CSCD
北大核心
2016年第5期166-170,共5页
Electric Power Automation Equipment
基金
中央高校基本科研业务费专项资金资助项目(2042-014kf0233)
国家电网公司科技项目(WNJ131-0048)
湖北省科技支撑计划(2014BAA013)
亚太经合组织合作基金资助项目~~
关键词
磁控电抗器
快速励磁
快速去磁
IGBT
整流
magnetically controlled reactor
rapid excitation
fast demagnetization
Insulated Gate Bipolar Transistors（IGBT）
rectification
