摘要
在实验上对光激发电荷畴进行有效的猝灭,是利用具有雪崩倍增效应的非线性砷化镓光电导开关作为太赫兹辐射源的关键问题之一。提出了基于双光束红外激光来猝灭砷化镓光电导开关的非线性模式的初步实验方法,两束激光时延为100 ps,其中第二束为猝灭光。实验中,12 mm间隙的砷化镓光电导开关偏置电压可达到32 k V,输出电流为900 A。同时,14 mm间隙开关在20 k V偏置、毫焦光能触发条件下,可连续工作230次,输出波形具有较好的重复性。结果表明,双光束红外激光能够猝灭非线性模式,重复工作性能稳定,对高重复频率触发下光电导方法产生高功率太赫兹辐射的研究奠定了前期实验基础。
To use the non-linear GaAs photoconductive semiconductor switch （PCSS） with avalanche effect for terahertz generation, it is important to quench the photo-activated carrier domain （PACD） transporting in the semiconductor. In this work, a basic setup for quenching the non-linear GaAs PCSS was proposed which consists of two laser beams. The second laser beam was delayed about 100 ps for quenching the PACD after the first beam. In the experiments, the PCSS with 12 mm electrode gap can be biased up to 32 kV with 0.9 kA switching current. Good reproducibility of waveforms about 230 times at 20 kV is achieved with 14mm PCSS when trigger laser is orders of magnitude of tens milli-joules. Results show the process of infrared quenching non-linear mode could be operating repeatedly, which paves the way for future research of high power terahertz generation at high repetition rate.
出处
《红外与激光工程》
EI
CSCD
北大核心
2016年第4期44-48,共5页
Infrared and Laser Engineering
基金
国家自然科学基金重大科研仪器研制项目(61427814)
国家自然科学基金面上项目(51377133,51477140)
中国博士后科学基金(2013M542369,2015T81044)
陕西省科技计划(2014JQ7258,2014KCT-13)
陕西省教育厅科研计划(2013JK0610)
西安市科技计划(CXY1509-4)
关键词
砷化镓
光电导开关
非线性模式
太赫兹
GaAs
photoconductive semiconductor switch
non-linear mode
terahertz
