摘要
This paper summarizes our research work on optoelectronic devices with nanostructures. It was indi- cated that by manipulating so called ＂general energybands＂ of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton （SPP）, novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact （8 μm -17.6μm） footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hereto optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption （TSPA）, and realized diffraction-limit-overcoming photolithography with resolution of-1/11 of the exposure wavelength.
This paper summarizes our research work on optoelectronic devices with nanostructures. It was indi- cated that by manipulating so called ＂general energybands＂ of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton （SPP）, novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact （8 μm -17.6μm） footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hereto optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption （TSPA）, and realized diffraction-limit-overcoming photolithography with resolution of-1/11 of the exposure wavelength.
基金
This work was supported by the National Basic Research Program of China （No. 2013CB328704 and 2013CBA01704）, the National Natural Science Foundation of China （Grant No. 61307068）.
