摘要
采用电化学沉积法在酸性电解液中制备n型Cu_2O薄膜,并对其进行Cl掺杂,制备Cu_2O-Cl结构。然后利用连续离子吸附法在样品薄膜上复合PbS量子点。通过SEM和UV-vis对样品进行表征,并对样品的光电化学性能进行了测试。结果表明,未掺杂的Cu_2O对PbS量子点的吸附能力较强一些,经PbS敏化后的样品在太阳光谱的吸收拓展到了近红外区,PbS/Cu_2O和PbS/Cu_2O-Cl复合结构的光电化学性能均有所增加,尤其是短路电流密度。PbS复合后的样品转换效率最高仅为0.67%,主要原因是两者能级的不匹配,形成异质结时引入界面态,得不到理想的转换效率。
n-Cu2 O films were prepared by using KCl as the precursor,and Cl-doped Cl structure were obtained by making electrodeposition in acid electrolyte. Then PbS/Cu2 O composite structure was fabricated with SILAR method.The samples were characterized by scanning electron microscopy（SEM）and UV-vis absorption spectrum.In addition,the conversion efficiency of composite electrode materials was characterized under visible light with the measured density of 100mV·cm^-2.The results demonstrat that the optical absorption is widened to near infrared region and the photo-current is greatly improved after the modification of PbS.The top photoelectric conversion efficiency is only 0.67%,which due to the interface state between the mismatched band gap of PbS and Cu2 O.
出处
《半导体光电》
CAS
北大核心
2016年第1期77-81,共5页
Semiconductor Optoelectronics
基金
国家磁约束核聚变能研究专项资助项目(2011GB112001
2013GB110001)
国际合作项目(2013DFA51050)
国家自然科学基金项目(51271155
51377138)
国家"863"计划项目(2014AA032701)
高等学校博士学科点专项科研基金项目(20120184120024)
