摘要
对不同条件下制备的锑化镓抛光晶片表面进行了TOF-SIMS测试比较。结果表明使用体积比为5∶1的HCl与CH_3COOH的混合溶液清洗腐蚀(100)GaSb晶片表面,可以有效地去除金属离子、含S离子和大部分有机物,而使用(NH_4)_2S/(NH_4)_2SO_4混合溶液方法钝化表面,可以使表面大部分Ga和Sb元素硫化,降低了表面态密度。分析比较了清洗和钝化工艺对晶片表面化学成分的影响。
Surface residual impurities and compouds of gallium atimonide（GaSb）wafers prepared by different methods have been investigated by TOF-SIMS.The results indicate that the surface treatment of GaSb（100）based on HCl and CH3 COOH solutions（volume ratio is 5∶1）can effectively remove metals,sulfur anions and organics.Surface passivation based on（NH4）2S/（NH4）2SO4solutions can sulfuride most element gallium and atimonide on the surface and decreases surface state density.Effects on surface composition of wafers in both treatments were analyzed by comparisons.
出处
《半导体光电》
CAS
北大核心
2016年第1期55-58,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61744104)
