摘要
硅基片上射频集成无源器件进行S参数测试时不可避免受到焊盘寄生效应的影响。针对这一问题,提取了三组不同长度硅基共面波导型传输线的S参数,基于级联理论的三种去嵌入方法被用于传输线模型分布参数的精确表征,并结合电磁仿真综合对比。结果表明:相对于其他两种常用去嵌入方法,"混合"法得到的S参数曲线与无焊盘仿真最为接近(平均偏差S_(11)≤3.392%,S_(21)≤5.184%),且削弱了去嵌入过程中测量误差的影响,有效减少了分布参数曲线波动。
Whereas measurements of S-parameters for silicon-based RF integrated passive components inevitably suffer influence of parasitic effect originated from contact pads, three groups experimental S-parameter data of different lengths for silicon-based coplanar waveguide transmission lines were extracted. Three different de-embedding characterization methods based on cascade-based method were used in transmission line model precisely to characterize distribute parameters, and compated with electromagnetic simulation. The results show the S-parameters curve of ＂Hybrid＂ de-embedding method is more closed to that of no-pad electromagnetic simulation compared other with de-embedding methods, the average deviation of S11 is less than 3.392%, and that of S21 is less than 5.184%. Besides, ＂Hybrid＂ de-embedding method can weaken effects of measurement error from de-embedding process and reduce fluctuation of distribution parameters curve effectively.
出处
《电子元件与材料》
CAS
CSCD
2016年第3期71-75,80,共6页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.61361004)
广西科学研究与技术开发计划资助项目(No.桂科转14124005-1-7)
广西教育厅科学技术研究项目(No.2013YB096)
关键词
无源器件
共面波导
S参数
测试
去嵌入
分布参数
passive device
coplanar waveguide
S-parameter
test
de-embedding
distribute parameters
