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L频段宽带GaN芯片高功率放大器设计 被引量:4

Design of broadband amplifier with GaN power device in L band
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摘要 针对当前无线通信系统中射频功率放大器工作带宽窄、输出功率和附加效率低的缺点,本文基于CREE公司的GaN功率管设计了一款新型的L频段宽带大功率射频功率放大器。用源牵引和负载牵引技术测得工作频段内最佳输入输出阻抗,再通过集总参数元件与微带线结合的方法设计宽带匹配网络,并对放大器功率、效率以及谐波分量等指标进行测试。测试数据表明,当放大器工作在L频段300 MHz带宽内(相对工作带宽为27.7%),输入功率为34dBm的连续波(CW)时,其输出功率可达50.4dBm(108 W),附加效率不低于48%,平坦度为±0.1dB。因此,本文设计的GaN射频宽带功率放大器具有带宽宽、效率高、功率大的特点,具备应用价值。 In order to solve the problem of narrow working band and low output power and power-added efficiency in current wireless communication system,this paper proposes a new type of the broadband high power amplifier in L Band designed by GaN device made by CREE.A method based on source-pull/load-pull simulation has been used to find optimum source and load impedances.Then using an approach of mixing of microstrip line and capacitor,wideband matching networks is designed.Large-signal measurement results show that when the input power is 34 dBm among the band of 300 MHz in the L-band(relative operating bandwidth is 27.7%),the output power is higher than50.4dBm(108 W),the power-added efficiency(PAE)is over 48% and the plainness is ±0.1dB at the whole working band.The data indicates that the power amplifier based on GaN has the advantages of wide band,high efficiency and output power.
作者 张忍 刘彦北
出处 《电子测量技术》 2016年第1期5-8,共4页 Electronic Measurement Technology
关键词 射频功率放大器 匹配网络 附加效率 氮化镓(GaN) radio frequency power amplifier matching networks power-added efficiency(PAE) GaN
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