期刊文献+

基于忆阻器的五阶MCK混沌电路研究 被引量:6

Five order MCK chaotic circuit based on memristor
下载PDF
导出
摘要 采用忆阻器替换分段线性电阻的方法,在Matsumoto,Chua和Kobayashi(MCK)提出的四阶混沌电路基础上,设计了一个含有忆阻器的五阶对称混沌电路,建立了五阶忆阻混沌电路的数学模型。采用常规动力学分析方法,分析了五阶忆阻混沌电路的平衡点集及其稳定性、Lyapunov指数。采用常规元器件,构建了五阶忆阻混沌电路的仿真模型,并进行了电路仿真实验。理论分析和仿真实验结果表明,设计的五阶忆阻混沌电路具有丰富的混沌行为,丰富了忆阻混沌电路的设计与应用。 A five order symmetry chaotic circuit including memoristor was designed by adopting the method which memoristor replace the piecewise-linear resistance. Based on the four order chaotic circuit proposed by Matsumoto, Chua and Kobayashi (MCK), the model of five order memoristor circuit was built. Conventional dynamics analysis method was used to analyze the equilibrium point set, stability and Lyapunov exponent. Conventional components were used to build simulation model of five order memoristor chaotic circuit and carry out circuit simulation experiments. Theoretical analysis and simulation experimental results show that five order memoristor chaotic circuit designed has rich chaotic behavior, which widen the design and application of memoristor chaos circuit.
出处 《量子电子学报》 CAS CSCD 北大核心 2016年第1期56-62,共7页 Chinese Journal of Quantum Electronics
基金 国家自然科学基金 11272119 湖南省自然科学基金 14JJ2099~~
关键词 非线性光学 五阶忆阻混沌 动力学分析 忆阻器 混沌电路 nonlinear optics five order memristor chaos dynamics analysis memristor chaotic circuit
  • 相关文献

参考文献19

  • 1Chua L O.Memristor-the missing circuit element[J].IEEE Trans Circuit Theory, 1971, 18(5):507-519. 被引量:1
  • 2Strukov D B, Snider G S, Stewart D R, et al.The missing memristor found[J].Nature, 2008, 453:80-83. 被引量:1
  • 3Ventra M D, Pershin Y V, Chua L O.Circuit elements with memory: memristors,memcapacitors,and meminductors[J].Proc IEEE, 2009, 97(10):1717-1724. 被引量:1
  • 4Martinelli G.Circuit modeling of nano-devices[J].Electronics Lett, 2008, 44(22):1294-1295. 被引量:1
  • 5Benderli S, Wey T A.On SPICE macromodelling of TiO2 memristors[J].Electronics Lett, 2009, 45(7):377-379. 被引量:1
  • 6Biolek Z, Biolek D, Biolková V.SPICE model of memristor with nonlinear dopant drift[J].Radioengineering, 2009, 18(2):210-214. 被引量:1
  • 7Chua L O, Kang S M.Memristive devices and systems[J].Proc IEEE, 1976, 64(2):209-223. 被引量:1
  • 8Joglekar Y N, Wolf S J.The elusive memristor: properties of basic electrical circuits[J].European J Phys, 2009, 30(4):661-675. 被引量:1
  • 9Pershin Y V, Di Ventra M.Memristive circuits simulate memcapacitors and meminductors[J].Electronics Lett, 2010, 46(7):517-518. 被引量:1
  • 10Riaza R.Nondegeneracy conditions for active memristive circuits[J].IEEE Trans Circuits Systems – II, 2010, 57(3):223-227. 被引量:1

二级参考文献61

共引文献40

同被引文献47

引证文献6

二级引证文献11

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部