摘要
采用化学气相沉积法,以Si O2/Si为衬底、镍膜为催化层,研究不同催化层厚度对石墨烯生长的影响。选择拉曼光谱,透射电子显微镜等手段对石墨烯的层数和质量进行表征。结果表明,随着Ni膜厚度的增加,石墨烯的缺陷减小,而且层数也减少,当Ni膜厚度为300 nm时,可以在Si O2/Si基板上获得高质量的单层石墨烯。
Graphene films were prepared on Si O2/ Si substrate surface by thermal chemical vapor deposition（ CVD）,effect of Ni catalyst layer thickness on the growth of graphene was studied. The quality and the layers of the graphene were characterized by Raman spectroscopy and transmission electron microscopy. The results show that the defect and the layers of the graphene decrease with the thickness of the Ni catalyst layer increasing. The single-layer graphene directed growth on Si O2/ Si substrate is obtained when the thickness of Ni catalyst layers is 300 nm.
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2016年第1期205-208,共4页
Transactions of Materials and Heat Treatment
基金
国家自然科学基金(51165016)
