摘要
为满足国内半导体器件单粒子效应（SEE）截面与温度的关系研究需求,本文基于北京HI-13串列加速器SEE辐照实验终端研制了样品温度测控系统,实现了90~450K范围内实验样品温度的测量和控制,系统控制精度好于±1K。为验证系统可靠性,使用该系统研究了SRAM单粒子翻转（SEU）截面随温度的变化关系,在215~353 K范围内测量了SRAM翻转截面随温度的变化曲线。结果表明,SRAM SEU截面随温度的升高而增加,与理论预期结果一致。
In order to meet domestic demands of studying the relationship between temperature and single event effect（SEE）cross-section,a device under test（DUT）temperature measurement and control system was developed based on Beijing HI-13 tandem accelerator SEE irradiation facility.The DUT temperature could be measured and controlled within the range of 90-450 K,and its control accuracy is better than ±1K.To verify the reliability of this system,the relationship between temperature and single event upset（SEU）cross-section was investigated in 150 nm thin film transistor（TFT）technology SRAM in the temperature range of 215-353 K.The results show that the SEU cross-section increases with temperature,and it is consistent with the theoretical expected result.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2015年第12期2261-2265,共5页
Atomic Energy Science and Technology
基金
国家自然科学基金资助项目(11405275)
关键词
低温
高温
重离子
单粒子效应
单粒子翻转
low temperature
elevated-temperature
heavy ion
single event effect
single event upset
