摘要
化学机械抛光(CMP)是硅通孔(TSV)工艺中的关键步骤之一,抛光工艺和抛光液是影响抛光效果的两大决定因素。主要研究了抛光液中螯合剂在TSV CMP中对铜膜去除速率及抛光后铜膜表面粗糙度的影响,由实验结果可知,随着抛光液中螯合剂体积分数的增加,铜膜去除速率先增加后趋于平衡,螯合剂体积分数为5%时铜膜的去除速率最大,约为1 450 nm/min;随着抛光液中螯合剂体积分数的增加,抛光后铜膜表面粗糙度先减小后增大,螯合剂体积分数为5%时铜膜表面粗糙度最小,约为1.77 nm。
Chemical mechanical polishing（CMP）is one of the key steps in the through silicon via（TSV）process,and the polishing effect depends on two factors,i.e.,the polishing process and polishing slurry.The effects of the chelating agent on the removal rate of the copper film in TSV CMP and the surface roughness of the copper film after polishing were mainly studied.The experimental result shows that the copper removal rate increases firstly and then keeps invariability with the increase of the volume fraction of the chelating agent in the polishing slurry.When the volume fraction of the chelating agent is 5%,the removal rate of the copper film is the largest,about 1 450 nm/min.The surface roughness of the copper film after polishing firstly decreases,and then increases with the increase of the volume fraction of the chelating agent in the polishing slurry.When the volume fraction of the chelating agent is 5%,the surface roughness of the copper film is minimum,about 1.77 nm.
出处
《微纳电子技术》
北大核心
2015年第12期791-794,共4页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)
河北省自然科学基金资助项目(E2013202247
E2014202147)
河北省教育厅资助科研项目(QN2014208)
