摘要
本研究采用金属-绝缘体-半导体的平板结构在(111)切向的近本征硅单晶的空间电荷区内观测到了线性电光效应。实验结果表明:硅单晶的线性电光效应十分可观,在设计硅基光电子器件时必须考虑。该效应在未来有可能作为一种研究硅器件的空间电荷区性质的工具。
In this study, the linear electro-optic effect is observed in the space charge region of a tangential near-ly intrinsic silicon single crystalvia adopting the flat plate structure（111） of metal-insulator-semiconductor. Theexperimental results show that the linear electro-optic effect of silicon crystal is very considerable, and it must betaken into account in the design of silicon based optoelectronic devices. The effect in the future may be a tool forstudying the properties of silicon devices in the space charge region.
出处
《河南科技》
2015年第8期127-129,共3页
Henan Science and Technology
关键词
硅
普克尔斯效应
空间电荷区
Silicon
Pockels effect
space charge region
