摘要
通过采用高效磷光体系材料和顶发射有机发光结构,配合自有的SVGA060全数字信号电路系统架构CMOS硅基驱动电路,获得了发光峰位于535 nm的高亮度单色绿光、0.6英寸、800×600分辨率OLED微显示器件,最大亮度可达20000 cd/m^2。其起亮电压为2.6 V,亮度从20 cd/m^2到20000 cd/m^2的驱动电压摆幅为2.7 V,最大电流效率为24.43 cd/A。电流密度为20 m A/cm^2时,色坐标CIEX=0.286、CIEY=0.665。该器件在1000 cd/m^2和500 cd/m^2亮度下的半衰期为42559 h和186208 h。
A high brightness, 0.6 inch, 800×600, mono green OLED micro-display, which based on phosphorescent materials, high efficient top-emitting structure and SVGA060 si-base CMOS backplane with full digital system driver circuit have been fabricated. The voltage of device start working is only 2.6 V, and the voltage swing as low as 2.7 V from 20 cd/m2 to 20000 cd/m2. When current density is 20 mA/cm2, the green emission with peak at 535 nm and CIE coordinates X=0.286, Y=0.665. The maximun current efficiency is 24.43 cd/A. The optimized devices have a half-life of 42559 h@ 1000 cd/m2 and 186208 h@500 C d/m2.
出处
《红外技术》
CSCD
北大核心
2015年第12期1022-1026,共5页
Infrared Technology
基金
云南省应用基础研究重点项目
编号:2012FA004
昆明市产业创新发展重点项目
编号:2014-01-A-G-02-2006
关键词
高亮度绿光
OLED
微显示器件
high brightnessgreenemitting, OLED, micro-display
