摘要
The charge-trapping process, with HfO2 film as the charge-capturing layer, has been investigated by using in situ electron energy-loss spectroscopy and in situ energy-filter image under positive external bias. The results show that oxygen vacancies are non-uniformly distributed throughout the HfO2 trapping layer during the programming process. The distribution of the oxygen vacancies is not the same as that of the reported locations of the trapped electrons, implying that the trapping process is more complex. These bias-induced oxygen defects may affect the device performance characteristics such as the device lifetime. This phenomenon should be considered in the models of trapping processes.
套住费用的进程，作为捕获费用的层与 HfO <sub>2</sub> 拍摄，被在积极外部偏爱下面在 situ 电子精力损失光谱学并且在 situ 精力过滤器图象使用调查了。结果证明氧空缺在整个在编程过程期间套住层的 HfO <sub>2</sub> 是非一致地分布式的。氧空缺的分发不与套住的电子的报导地点的一样，暗示套住的过程是更复杂的。这些导致偏爱的氧缺点可以影响象设备一生那样的设备表演特征。这现象应该在套住过程的模型被考虑。
基金
Acknowledgements This work was supported by the National Basic Research Program of China （Nos. 2012CB932302, 2010CB934202 and 2013CB932904）, the National Natural Science Foundation of China （No. 10974235）.
