摘要
采用基于硝酸钾溶液的电化学刻蚀工艺,通过横向刻蚀牺牲层的方法,在金属有机化学气相沉积法生长的氮化镓(GaN)外延层上实现了纳米孔与纳米薄膜两种结构。通过扫描电子显微镜(SEM)对GaN的表面和截面进行了对比表征。结果表明,由于在刻蚀过程中氧气的产生,相比于稳定性很好的SiO2,易于氧化剥落的光刻胶在大电压刻蚀下存在着明显的缺陷;在刻蚀电压为12~22 V时牺牲层可以被刻蚀出纳米孔结构,且随着电压的增加刻蚀孔也会增大;在刻蚀电压为23 V及以上电压时牺牲层被完全去除;刻蚀过程中刻蚀速率逐渐降低,100μm的纳米薄膜可在270 s时制作完成。
Nano-porous and nanomembranes structures were realized on the gallium nitride(GaN)epitaxial layer grown by metal organic chemical vapor deposition by using electrochemical etching process of potassium nitrate solution and lateral etching of the sacrificial layer.The surface and cross section of GaN were characterized by scanning electron microscopy(SEM).The results show that due to the generation of oxygen during the etching process,the photoresist which is easy to be oxidized and peeled off has obvious defects under the large voltage etching compared with SiO2 with good stability.When the etching voltage is 12-22 V,the sacrifical layer can be etched into the nano-pore structure,and the size of etching holes increase with the increase of voltage.When the etching voltage is 23 V and above,the sacrificial layer is completely removed.During the etch process,the etch rate is gradually reduced,and the 100μm nanomembranes can be fully etched out at 270 s.
作者
李昂
王伟凡
周桃飞
王建峰
徐科
Li Ang;Wang Weifan;Zhou Taofei;Wang Jianfeng;Xu Ke(Institute of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)
出处
《半导体技术》
CAS
北大核心
2019年第10期778-782,812,共6页
Semiconductor Technology
基金
国家重点研究计划资助项目(2017YFB0404100)
