摘要
传统的功率放大器调制驱动器采用电荷泵式结构,使电路输出的脉冲宽度受到限制,同时,外围元器件连接也较为复杂。提出了一种新型调制驱动器架构解决以上问题。采用高侧驱动p型MOSFET的应用架构,从而去除了电荷泵式结构;并引入分时电控结构,减少了外围元件。基于0.5μm BCD工艺设计了一款半桥式调制驱动器芯片,测试结果表明,采用该技术的半桥驱动器芯片,在没有外接电容的情况下,驱动能力可达400 mA,负载电容1 nF时,驱动信号上升沿和下降沿均小于100 ns,能够满足大多数小体积应用需求,具有极好的应用适应性。
The traditional power amplifier modulation driver adopts the charge pump structure which limits the output pulse width of the circuit,and its external components connetion is complicated.A novel modulation driver architecture was proposed to solve above problems.The application architecture of high side drive p-MOSFET was adopted to remove the charge pump structure.And the time-sharing current control structure was introduced to reduce external components.A half-bridge modulation driver chip based on the 0.5μm BCD process was designed.The test results show that the half-bridge driver chip using these technologies can drive up to 400 mA without external capacitors.The rising and falling edges of the driving signal are both less than 100 ns when the load capacitance is 1 nF.It can meet the needs of most small volume applications and has excellent application adaptability.
作者
赵永瑞
史亚盼
张浩
师翔
谭小燕
张在涌
Zhao Yongrui;Shi Yapan;Zhang Hao;Shi Xiang;Tan Xiaoyan;Zhang Zaiyong(North-China Integrated Circuit Co.,Ltd.,Shijiazhuang050200,China;The13th Research Institute,CETC,Shijiazhuang050051,China)
出处
《半导体技术》
CAS
北大核心
2019年第9期665-668,680,共5页
Semiconductor Technology
基金
国家科技重大专项资助项目(2016ZX03001005,2017ZX030121010)
关键词
功率放大器调制驱动器
电荷泵
分时电控
MOSFET
自放电
半桥
power amplifier modulation driver
charge pump
time-sharing current control
MOSFET
self discharge
half-bridge
