摘要
研制了一款可应用于新一代宽带无线移动通信系统的26 GHz GaN单片微波集成电路(MMIC) Doherty功率放大器(DPA)。Doherty功率放大器的输入匹配网络中采用兰格耦合器进行载波功率放大器和峰值功率放大器功率合成及90°相位补偿,输出网络中采用相位补偿线和阻抗变换电路,提高了放大器的线性度和效率。采用SiC衬底AlGaN/GaN高电子迁移率晶体管(HEMT)工艺进行了流片,芯片面积为3.0 mm×2.5 mm。芯片装配后测试表明,在频率为24.5～26.0 GHz内,Doherty MMIC功率放大器饱和输出功率为4 W,饱和时漏极效率大于24%,在回退8 dB时的漏极效率大于15%。
A 26 GHz GaN monolithic microwave integrated circuit(MMIC) Doherty power amplifier(DPA)was designed and manufactured for the new generation broadband wireless mobile communication system application. In the input matching network of the Doherty power amplifier, the Langer coupler was used to synthesize the power of the carrier power amplifier, and peaking power amplifier and 90° phase compensation was carried out. The efficiency and linearity of the amplifier were improved by phase offset lines and impedance conversion circuit in the output network. The amplifier was implemented in a AlGaN/GaN HEMT technology on SiC substrate with a chip area of 3.0 mm×2.5 mm. The test results of the fabricated chip show that in the frequency range of 24.5-26.0 GHz the saturation output power of Doherty MMIC power amplifier is 4 W, the drain efficiency is more than 24% at the power saturation output, and the drain efficiency is more than 15% at 8 dB of back-off output power.
作者
董毅敏
蔡道民
高学邦
邬佳晟
汪江涛
谭仁超
Dong Yimin;Cai Daomin;Gao Xuebang;Wu Jiacheng;Wang Jiangtao;Tan Renchao(The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2019年第2期94-98,120,共6页
Semiconductor Technology
基金
国家科技重大专项资助项目(2017ZX03001024)
