摘要
利用磁控溅射技术,以Mg0.06Zn0.94O为陶瓷靶材,制备了N掺杂p型Mg0.1 3Zn0.8 7O薄膜,薄膜的电阻率为42.45Ω·cm,载流子浓度为3.70×1017/cm3,迁移率为0.40cm2·V-1·s-1。研究了该薄膜p型导电性质在室温空气下随时间的变化情况。实验结果表明,薄膜的电阻率逐渐升高,载流子浓度降低,五个月以后,薄膜转变为n型导电,电阻率为85.58Ω·cm,载流子浓度为4.53×1016/cm3,迁移率为1.61cm2·V-1·s-1。真空热退火后重新转变为p型。结果显示,其p型导电类型的转变与在空气中吸附H2O或H2等形成浅施主有关。
Using radio frequency magnetron sputtering,p-type N doped Mg0.1 3 Zn0.8 7 O film was depos-ited on quartz substrate with Mg0.0 6 Zn0.94 O target.The film has resistivity of 42.45 W·cm,Hall mobility of 0.40 cm^2·V^-1 ·s^-1 and carrier concentration of 3.70×10^17/cm^3 .The stability of p-type conductivity in this film preserved in room temperature air ambient was studied.It is found that the re-sistivity increased and the carrier concentration decreased with time.The film transformed from p-type to n-type semiconductor with resistivity of 85.58 W·cm,Hall mobility of 1.61 cm^2 ·V^-1 ·s^-1 and carrier concentration of 4.53×10^16/cm^3 after preservation for five months.The film transformed to p-type semiconductor again after thermal annealing under 10^-4 Pa.It can be deduced that,the p-type film reverts to n-type conductivity because hydrogen and water were adsorbed by film to create shal-low donors in air ambient.
出处
《液晶与显示》
CAS
CSCD
北大核心
2015年第6期925-929,共5页
Chinese Journal of Liquid Crystals and Displays
基金
吉林省教育厅"十二五"科学技术研究项目(No.2013181)~~
关键词
射频磁控溅射
MgZnO薄膜
P型
稳定性
radio frequency magnetron sputtering
thin MgZnO films
p type
stability
