摘要
在斜切基片表面上引入原子台阶并对物理表面进行改性,可提高表面吸附原子的成核率及抑制量子点的合并,实现三维量子点在Stranski-Krastanov(S-K)模式生长的调控生长。概述了斜切基片法在Si衬底上生长有序量子点的研究进展;介绍了斜切基片作为图形衬底生长有序量子点的应用。叙述了斜切基片产生台面、台阶和扭结的图形衬底结构机制及影响因素,探讨了台阶模板形成机制及台阶模板上生长量子点的研究进展。
Inducing atomic steps on vicinal substrates and modifying the physical surfaces will improve the nucleation rate of adatoms and inhibit the combination of quantum dots on surface, realize the modulation of 3D quantum dots in Stranski-Krastanov （S-K） growth mode. The growth and application of ordered quantum dots on vicinal Si substrates as patterned templates are introduced. The mechanism and factors of terraces, ledges and kinks produced by vicinal substrates are described. The research progress on formation and growth of templates and growth of quantum dots on vicinal substrates are also reviewed respectively.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2015年第21期8-14,共7页
Materials Reports
基金
国家自然科学基金(11274266)
云南省应用基础研究计划重点项目(2013FA029)
关键词
斜切衬底
台阶
自组装模板
有序量子点
vicinal substrate, steps, selbassembled templates, ordered quantum dots
