期刊文献+

新型绝热微环谐腔型低功耗硅基调制器的设计 被引量:3

Design of new type adiabatic micro-ring harmonic cavity low-power silicon modulator
下载PDF
导出
摘要 为了改进绝热微环谐腔型的结构、降低谐振腔腔体损耗,采用了基于绝热过渡曲线的设计方法,提出了新型载流子注入/抽取结构,进行了理论分析和实验验证,取得了绝热微环谐振腔的谐振峰线宽、消光比及频率响应参量数据,比较了其与传统微环谐振腔的损耗。结果表明,使用所设计的外半径为2μm的谐振腔的谐振峰线宽仅为普通微环谐振腔的29.5%,消光比为13.5d B,电阻电容限制带宽提高了4倍,10Gbit/s调制速率下能耗仅为5.1f J/bit。这一结果大幅改善了绝热微环谐振腔的频率响应特性,降低了功耗。对腔形和载流子注入/抽取结构的研究可以进一步改善绝热微环谐振腔的性能,推动低能耗器件研究的发展。 For the purpose of improving the structure of adiabatic micro-ring resonator and reducing the resonator cavity loss,a new carrier injection / extraction structure was proposed based on adiabatic transition curve. After theoretical analysis and experimental verification,the data of resonant full wave at half maximum( FWHM) of the adiabatic micro-ring resonator,extinction ratio and frequency response parameters were obtained and compared with the loss of a traditional micro-ring resonator.The results show that FWHM of the adiabatic ring with outer radius of 2μm is only 29. 5% of that of a traditional micro-ring,the constrained bandwidth of resistance and capacitance increases 4 times,extinction ratio is 13. 5d B and energy consumption is5. 1f J / bit under modulation speed of 10 Gbit / s. This research is helpful to improve the frequency response and reduce the power consumption of an adiabatic micro-ring resonator significantly. The study on adiabatic transition and carrier injection / extraction structure can further improve the performance of the adiabatic micro-ring,and push the development of low energy consumption research.
作者 杨真
出处 《激光技术》 CAS CSCD 北大核心 2015年第6期885-888,共4页 Laser Technology
基金 江西省科技厅自然科学青年基金资助项目(20122BAB211040)
关键词 光学设计 硅基调制器 绝热过渡曲线 谐振腔 optical design silicon modulator adiabatic transition curve resonator
  • 相关文献

参考文献12

  • 1ZHU M X.MOS capacitive silicon electro-optic modulator high k gate dielectric layer research and design [D].Wuhan: Huazhong University of Science Technology, 2009:8-10. 被引量:1
  • 2REED G T, MASHANOVICH G, GARDE F Y, et al.Silicon optical modulators[J].Nature Photonics, 2010, 4(8): 518-526. 被引量:1
  • 3DONG P, CHEN L, XIE Ch J, et al.50Gb/s silicon quadrature phase-shift keying modulator[J].Optics Express, 2012, 20(19):21181-21186. 被引量:1
  • 4WATTS M R, ZORTMAN W A, TROTTER D C, et al.Vertical junction silicon microdisk modulators and switches[J].Optics Express, 2011, 19(22): 21989-22003. 被引量:1
  • 5赵宇,马可贞,杨德超,郭泽彬,张文栋,薛晨阳,闫树斌.可用于传感领域的环形谐振腔游标效应的研究[J].激光技术,2014,38(3):293-296. 被引量:2
  • 6陈凯,朱东旭,张平才.有限元矩阵的激光谐振腔模式分析[J].激光技术,2014,38(3):352-356. 被引量:5
  • 7DONG P, CHEN L, CHEN Y K, et al.High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators[J].Optics Express, 2012, 20(6):6163-6169. 被引量:1
  • 8YI H X, LONG Q F, TAN W, et al.Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission[J].Optics Express, 2012, 20(25): 27562-27568. 被引量:1
  • 9XIAO X, LI X Y, XU H, et al.44Gb/s silicon micro-ring modulators based on zigzag PN junctions[J].IEEE Photonics Technology Letters, 2012, 24(19): 1712-1714. 被引量:1
  • 10DING J F, CHEN H T, YANG L, et al.Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator[J].Optics Express, 2012, 20(7):7081-7087. 被引量:1

二级参考文献12

共引文献5

同被引文献25

引证文献3

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部