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硅纳米晶的制备及其在太阳电池中的应用研究 被引量:1

Preparation of Silicon Nanocrystals and Their Applications in Solar Cells
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摘要 硅纳米晶由于量子限域效应的作用而产生了多种不同于体硅材料的新特性,如荧光效应显著、光学带隙可调等,因而在微电子、光伏、生物医学等领域受到极大的重视。本文介绍了分立的硅纳米晶颗粒和硅纳米晶薄膜的制备方法,并对比了不同方法制备硅纳米晶体的优缺点。着重介绍了硅纳米晶体在太阳电池中应用的几种方式,包括利用纯硅纳米晶薄膜制备太阳电池、硅纳米晶体与有机薄膜基质结合形成复合结构太阳电池、含有硅纳米晶颗粒的硅墨水在太阳电池中的应用等。 Because of the quantum confinement effect, silicon nanocrystals exhibit some new features different from bulk silicon, such as enhanced photoluminescence and adjustable optical band gap, etc. Silicon nanocrystals have attracted much attention in the fields of microelectronics, photovoltaic, biomedicine and so on. In this paper, the different preparation methods of freestanding silicon nanocrystals and silicon nanocrystals embedded in thin films are reviewed, the advantages and disadvantages of different preparation methods are analyzed. Furthermore, the applications of silicon nanocrystals are focused on photovoltaic, including solar ceils made up of pure silicon-nanocrystal films, organic solar cells combined with silicon nanocrystals, and silicon nanocrystals ink for solar ceils.
出处 《化学进展》 SCIE CAS CSCD 北大核心 2015年第9期1302-1312,共11页 Progress in Chemistry
基金 国家自然科学基金项目(No.21377063 61106096 61574145) 浙江省自然科学基金项目(No.LY15F040003) 宁波市自然科学基金项目(No.2014A610036) 宁波大学王宽诚幸福基金资助~~
关键词 硅纳米晶 硅量子点 制备 太阳电池 silicon nanocrystals silicon quantum dot preparation solar cells
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参考文献98

  • 1Barbagiovanni E G, Lockwood D J, Simpson P J, Goncharova L V. Applied Physics Reviews, 2014, 1(1): 011302. 被引量:1
  • 2Cullis A G, Canham L T. Nature, 1991, 353(6342): 335. 被引量:1
  • 3Hua F, Swihart M T, Ruckenstein E. Langmuir, 2005, 21(13): 6054. 被引量:1
  • 4Zacharias M, Heitmann J, Scholz R, Kahler U, Schmidt M, Bl?sing J. Applied Physics Letters, 2002, 80(4): 661. 被引量:1
  • 5Luo J W, Stradins P, Zunger A. Ener. Environ. Sci., 2011, 4(7): 2546. 被引量:1
  • 6Beard M C, Knutsen K P, Yu P, Luther J M, Song Q, Metzger W K, Ellingson R J, Nozik A J. Nano Lett., 2007, 7(8): 2506. 被引量:1
  • 7Priolo F, Gregorkiewicz T, Galli M, Krauss T F. Nat. Nanotechnol., 2014, 9(1): 19. 被引量:1
  • 8Mangolini L. Journal of Vacuum Science & Technology B, 2013, 31(2): 020801. 被引量:1
  • 9Pavesi L, Turan R. Silicon Nanocrystals: Fundamentals, Synthesis and Applications, Wiley-VCH, 2010.1. 被引量:1
  • 10Green M A. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2013, 371(1996): 20110413. 被引量:1

二级参考文献11

  • 1Timmons M L, Venkatasubramanian R, Colpitts T S, et al. Graded-band-gap A1GaAs solar cells for AlGaAs Ge cascade cells. IEEE PV Specialist Conference, 1990 被引量:1
  • 2Rafat N H,Habib S E D. The limiting efficiency of band gap graded solar cells. Solar Energy Materials & Solar Cells, 1998 55:341 被引量:1
  • 3Araujo G L. Limits to efficiency of single and multiple band gap solar cells. Physical Limitations to Photovoltaic Energy Conversion, 1990:106 被引量:1
  • 4Kumar K P,Dasgupta A. An analytical model for conduction and valence band edge profiles of bandgap graded and displaced het eroj unctions. Solid-State Electronics, 1998,42 ( 10): 1779 被引量:1
  • 5谢孟贤 刘诺.化合物半导体材料与器件[M].成都:电子科技大学出版社,2001.. 被引量:1
  • 6Stringfellow G B, Craford M G. High brightness light emit ting diode-semiconductors and semimetals. Volume 48. Academic Press,San Diego,California,USA, 1997 被引量:1
  • 7Kaneko Y , Kishino K . Refractive indices measurement of (GaInP)m/(AlInP)n quasi-quaternaries and GaInP/AlInP multiple quantum wells. J Appl Phys, 1994,76(3):1809 被引量:1
  • 8Zhang X H,Chua S J,Fan W J. Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Appl Phys Lett, 1998,73:1098 被引量:1
  • 9Fowles G R. Introduction to modern optics. Dover Publica tions, 1975 被引量:1
  • 10Parrott J E. Choice of an equivalent black body solar temperature. Sol Energy,1993,51(3) :195 被引量:1

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