摘要
为了测量两种有源区材料半导体激光器的温度灵敏度,文中对In Ga As P/Ga As无铝和Al Ga In As/Al Ga As/Ga As有铝的808 nm大功率半导体激光器,采用阈值电流法衡量两种有源区材料激光器的特征温度。在各种温度下实验性地测量激光器的P-I曲线,并采用线性拟合法得到阈值温度线性关系,实验结果表明有铝激光器温度性能明显优于无铝激光器。
At present, AIGaInAs and InGaAsP have been mainly used in 808 nm high-power laser diode active layer, and the semiconductor laser is very sensitive to temperature. In order to measure the temperature sensitivity of two active layer material LDs, the threshold current method are used for 808 nm high power Al-free InGaAsP/GaAs lasers and Al-containing A1GaInAs/A1GaAs/GaAs lasers to measure the characteristic temperature. We test the P-I curves at various temperatures and obtain the linear relationship between the threshold current and temperature by lin- ear fitting. Experimental results show that the temperature properties of aluminum laser are better than those of the Al-free laser.
出处
《电子科技》
2015年第9期172-174,共3页
Electronic Science and Technology
基金
咸阳师范学院专项科研基金资助项目(12XSYK016)
关键词
有铝激光器
无铝激光器
特征温度
阈值电流法
Al-containing LD
Al-free LD
characteristic temperature
threshold current method
