摘要
Room-temperature operation of a GaSh based laterally coupled distributed feedback quantum-well laser diode emitting at 2 μm is demonstrated. The device exhibits single longitudinal mode characteristic as a result of the first order Cr-Bragg gratings alongside the narrow ridge waveguide. We design the laser structure to obtain a critical coupling condition corresponding to a coupling coefficient of 12cm-1. For a I-mm-iong uncoated laser diode with a 3-μm-wide stripe, a single mode output spectrum with side mode suppression ratio as high as 28.5 dB is achieved, and the maximum single mode continuous-wave output power is about 11 mW at room temperature.
Room-temperature operation of a GaSh based laterally coupled distributed feedback quantum-well laser diode emitting at 2 μm is demonstrated. The device exhibits single longitudinal mode characteristic as a result of the first order Cr-Bragg gratings alongside the narrow ridge waveguide. We design the laser structure to obtain a critical coupling condition corresponding to a coupling coefficient of 12cm-1. For a I-mm-iong uncoated laser diode with a 3-μm-wide stripe, a single mode output spectrum with side mode suppression ratio as high as 28.5 dB is achieved, and the maximum single mode continuous-wave output power is about 11 mW at room temperature.
基金
Supported by the National Basic Research Program of China under Grant No 2011CBA00608
the Beijing Nature Science Foundation of China under Grant No 4112058
