摘要
在11 MeV电子束辐照能量、不同辐照剂量和辐照退火条件下,研究了聚酰亚胺膜和氮化硅膜、二氧化硅膜、PSG膜以及它们组合形成的不同二次钝化结构的npn型开关晶体管参数(ts,hFE和两个不同电路下hFE的比值K)的差异,并分析了不同二次钝化结构电参数的差异的原因。结果表明,在降低辐照诱导的表面复合电流、提高晶体管的综合电学性能方面,纯氮化硅膜的二次钝化结构为最优选择。这种结构在存贮时间ts满足器件要求的同时,电流增益hFE和K值衰减幅度最小。这个结论有助于开关晶体管结构设计优化。
The difference of the npn type switching transistors electric parameters （ts , hrE and the ratio of hrz at two different Ic （K） ） were studied, Which is caused by different sencond-passivation layer formed by polyimide film and nitride film, oxide film, PSG film and their combination with 11 MeV electron irradiation energy and different doses and anneal condition. The difference mechanism of different sencond-passivation structures was also analyzed. The results show that the respects of the reduce iradiation induced the surface recombination current, and improving the comprehensive electric proper- ties of transistors, the pure nitride film is the best. It can minimize the attenuation of current gain hFE and K, and at the same time the storage time （ts） can meet the requirements. This conclusion is helpful for the optimization design of switching transistor structure.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第8期631-635,共5页
Semiconductor Technology
关键词
开关晶体管
电子辐照
氮化硅
存贮时间
电流增益
switching transistor
electron irradiation
Si3N4
storage time
current gain
