摘要
硫化镉(Cd S)是一种光学和电学性能优异的Ⅱ-Ⅵ族半导体材料。以硫化镉(Cd S)晶片作为籽晶,采用有籽晶的物理气相传输(PVT)法生长出大尺寸Cd S单晶,并对其电学、光学等性能进行了表征。结果表明,PVT法是一种理想的大尺寸Cd S单晶生长方法。
cadmium sulfide （CdS） is a kind of II-VI semiconductor materials with excellent optical and electrical properties. With cadmium sulfide （CdS） as seed crystal, the bulk CdS single crystal was grown by physical vapor transport （PVT） method, and its electrical and optical properties were characterized. The results showed that the PVT method was an ideal method for bulk CdS single crystal growth.
出处
《河南科技》
2015年第4期137-139,共3页
Henan Science and Technology
