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在Si_xGe_(1-x)C_(0.02)衬底上直接生长石墨烯

Direct Growth of Graphene on Si_xGe_(1-x)C_(0.02) Substrate
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摘要 基于锗衬底在石墨烯生长方面的自限制生长和表面催化特性,以甲烷(CH4)和氢气(H2)为前驱体,采用化学气相沉积(CVD)法分别在锗硅碳(SixGe1-xC0.02)(x=0.15,0.25,0.73)衬底和外延锗上直接生长石墨烯。研究了不同Si组分、H2与CH4体积流量比和生长温度对石墨烯质量的影响。利用光学显微镜(OM)、扫描电子显微镜(SEM)以及喇曼光谱对衬底和生长的石墨烯进行了表征分析。喇曼光谱结果表明,Si0.15Ge0.85C0.02衬底在750℃下可以生长出石墨烯,调节气体H2与CH4的体积流量比为50∶0.5时,生长出的石墨烯是双层的。OM和SEM结果表明,锗硅碳衬底具有比锗更好的热稳定性,高温下不会升华。 Based on the self-limiting and surface catalyzed characteristic of graphene growth on germanium substrate, using methane and hydrogen gas as precursors, the graphene directly grew on SixGe1- xC0. 02( x =0. 15,0. 25,0. 73) substrate and epitaxial germanium by means of chemical vapor deposition( CVD) method. The influence of Si components,growth temperature and gas volume flow ratio of H2 and CH4on the quality of the graphene. The characterizations of substrate and synthesized graphene were analyzed using the optical microscope( OM),scanning electron microscopy( SEM) and Raman spectroscopy. The Raman results show that the graphene can grow on Si0. 15Ge0. 85C0. 02 substrate under the temperature of 750 ℃. When H2 and CH4gas volume flow ratio is 50 ∶ 0. 5,the synthesized graphene is bilayer. The OM and SEM results show that SixGe1- xC0. 02 substrate has a better thermal stability than germanium,without sublimation at high temperature.
出处 《半导体技术》 CAS CSCD 北大核心 2015年第7期531-535,553,共6页 Semiconductor Technology
基金 国家自然科学基金资助项目(61306124)
关键词 锗硅碳(SixGe1-xC0.02) 化学气相沉积(CVD) 外延Ge 石墨烯 热稳定性 SixGe1-xC0.02 chemical vapor deposition(CVD) epitaxial germanium graphene thermal stability
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