6OGURA T, SUG1YAMA K, NINOMIYA H, et al. High turn-off current capability of parallel-connected 4.5 kV trench IEGT [ J ]. IEEE Trans on Electron Devices, 2003, 50(5) :1392-1397. 被引量：1
7YAMAGUCHI M, OMURA I, URANO S, et al. IEGT design criterion for reducing EMI noise[C]// Proceedings of the IEEE 16th International Symposium on Power Semiconductor Devices ICs (ISPSD' 04), May 24-27, 2004, Kitakyushu, Japan:115-118. 被引量：1
8FURUYA M, ISHIYAMA Y. Current measurement inside press pack IGBTs[J]. Fuji Electric Journal, 2002, 75(8): 1-4. 被引量：1
9RAHIMO M, KOPTA A, LINDER S. Novel enhanced-planar IGBT technology rated up to 6.5 kV for lower losses and higher SOA capability [ C ]// Proceedings of the IEEE 18th International Symposium on Power Semiconductor Devices and IC's (ISPSD'06), June 4-8, 2006, Naples, Italy: 4p. 被引量：1
10OMURA I, DAMN T, MIYAKE E, et al. Electrical and mechanical package design for 4.5 kV ultra high power IEGT with 6 kA turn off capability[C]// Proceedings of the IEEE 15th International Symposium on Power Semiconductor Devices and ICs (ISPSD'03), April 14-17, 2003, Cambridge, UK: 114-117. 被引量：1
