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Sb掺杂纳米SnO_2/多孔Ti电极的制备及其降解甲基橙性能(英文) 被引量:4

Preparation of Sb Doped Nano SnO_2/Porous Ti Electrode and Its Degradation of Methylene Orange
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摘要 利用热分解方法在多孔钛上制备了Sb掺杂纳米SnO2电极。也研究了该电极降解甲基橙的电化学性能。SEM和XRD测试表明,在多孔钛基体上可获得完整的、无裂缝的涂层。无裂缝的涂层表面由粒径范围在80-230 nm的Sb掺杂SnO2纳米颗粒组成。HRTEM测试结果表明,SnO2纳米颗粒由5-6 nm细小颗粒构成。在其余条件相同的情况下,强化寿命试验表明,Sb掺杂纳米SnO2/多孔Ti电极的寿命远大于致密钛基体上的电极。Sb掺杂纳米SnO2/多孔Ti电极可将浓度为100 mg/L的甲基橙溶液降解到8 mg/L,显示出该电极具有很强的有机物污染物电催化降解能力。并指出采用简单的表面处理技术,将使多孔钛具有很高的潜力被应用到有机污水降解领域。 Sb doped nano SnO2 coating electrode was prepared on the porous Ti by a simple thermal decomposition method and then its electrochemical property for degradation of methylene orange was also investigated.SEM and XRD measurements results show that an integrative and crackless coating layer on porous Ti substrate can be obtained.The crackless coating surface is composed of Sb doped SnO2 nanoparticles with a size range from 80 nm indicates to 230 nm.HRTEM test suggests that these SnO2 nanoparticles consist of coating grains with 5-6 nm.Intensified life time test indicates that SnO2/porous Ti electrode has a longer service life time than the coatings on dense titanium plate.Moreover,the as-prepared Sb doped SnO2/porous Ti electrode can degrade the methylene orange with 100 mg/L concentration into that with 8 mg/L,which reveals that the electrode has a strong electrochemical ability to degrade organic pollutants.A simple surface treatment of porous Ti for organic pollutants degradation was presented in the paper,showing its great application potential in the area of pollutants degradation.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2015年第6期1326-1330,共5页 Rare Metal Materials and Engineering
基金 National Natural Science Foundation of China(50674076,50902115) Natural Science Foundation of Shaanxi Province(2013JZ015)
关键词 Sb掺杂 纳米SNO2 多孔Ti电极 甲基橙 Sb doped nano SnO2 porous Ti electrode methylene orange
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  • 1Cui X, Zhao t3 H, Lei Y Z et al. Materials Chemistry and Physics [J], 2009, 113:314. 被引量:1
  • 2Fang Z Q, Yang M, Nan J Met al. Rare Metal Materials and Engineering[J], 2011, 40(9): 1638 (in Chinese). 被引量:1
  • 3Srivastava R A, Jain K. Materials Chemistry and Physics[J], 2007, 105:385. 被引量:1
  • 4Ding H Y, Feng Y J, Liu J F. Materials Letters[J], 2007, 61: 4920. 被引量:1
  • 5Sun Z Q, Lu H Y, Ren X B et al. Acta Phys-Chem Sin[J], 2009, 25(7): 1385 (in Chinese). 被引量:1
  • 6Kotz R, Stueki S, Career B. JAppl Electrochem[J], 1991, 21: 14. 被引量:1
  • 7Montilla F, Morall6n E, Vquez J L. J Electrochem Soc[J], 2005, 152 (10): B421. 被引量:1
  • 8Chen A C, Nigro S. JPhys Chem B[J], 2003, 107:13 341. 被引量:1
  • 9Chen X M, Chen G H, Yue P L. JPhys Chem B [J], 2001, 105: 4623. 被引量:1
  • 10Koroteenkov G, Brinzari V, Schwank Jet al. Mater Sci Eng C, Biomim Mater, Sens Syst[J], 2002, 19:73. 被引量:1

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