摘要
采用钒掺杂半绝缘4H-SiC衬底,利用磁控溅射在硅衬底上制备了Ni/Au金属电极,并封装加工成同面型横向电极结构SiC光导开关,研究了不同激光触发能量对光导开关光电响应及导通电阻的影响。用波长532nm的激光作为触发源,当激光触发能量从26.7mJ增加到43.9mJ时,光导开关的导通电阻从295Ω降低到197Ω。利用复合理论推导出激光触发时导带中载流子浓度随时间的变化规律,并利用MATLAB模拟计算了不同触发能量下开关的导通电阻,得到了与实验较一致的结果。在此基础上,提出了降低开关导通电阻的两种途径。
The lateral geometry 4H-SiC photoconductive semiconductor switches （PCSS） were fabricated on the vanadium compensated semi-insulating 4H-SiC substrate with the Si （0001） Ni/Au contacts deposited by magnetron sputtering. The effect of laser excitation energy on the photoelectric response and that on the state resistance of PCSS were investigated. The experimen- tal results showed that a nano-second pulse electric signal was obtained when the PCSS was triggered with a 532 nm wavelength laser light. The on state resistance decreased from 295Ω to 197Ω when the laser excitation energy increased from 26.7 mJ to 43. 9 mJ. Based on the combination theory, the relationship between the carrier concentration and time deduced when the PCSS was irradiated. The on state resistance simulated from the MATLAB is consistent with the experimental results. Finally, the two ways to reduce the on resistance of the switch are put forward.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2015年第5期233-237,共5页
High Power Laser and Particle Beams
基金
国家973计划预研项目
上海市教委创新项目(13ZZ108)
上海市科委重点支撑项目(13520502700)
关键词
光导开关
钒掺杂4H-SiC
横向电极结构
导通电阻
photoconductive semiconductor switches
vanadium compensated 4H-SiC
lateral geometry
on state resistance
