摘要
以Cd(NO3)2·4H2O,Na2Se O3和Na2Te O3的混合液为电解液,采用电化学共沉积法在氧化铟锡(ITO)玻璃基底上制备了CdSexTey薄膜样品。探讨了沉积电压、水浴温度、沉积时间以及Cd,Te和Se物质的量比等制备条件对样品在模拟太阳光下的开路电压的影响。结果表明,在沉积电压为3.0 V,水浴温度为50℃,沉积时间为30 min,n(Cd)∶n(Te)∶n(Se)=5.6∶1∶1时制备的CdSexTey薄膜具有较高的开路电压,其值可达到0.464 1 V。X射线衍射(XRD)分析结果显示,CdSexTey样品中含单质态Se,CdSexTey的3个主要衍射峰对应的晶粒尺寸分别为43.07,44.56和44.03 nm。能谱分析(EDS)结果显示,样品中Cd,Te,Se元素的质量分数分别是6.53%,6.25%和14.52%,原子数分数分别为1.68%,1.42%和5.32%。对Cd元素原子数分数进行归一化处理,则样品CdSexTey中x为3.17(其中有化合态Se2-为0.15,单质态Se为3.02),y为0.85。
The CdSexTeythin film was prepared on the indium-tin oxide（ ITO） glass substrate by electrochemical deposition and the mixed solution of Cd（ NO3）2·4H2O,Na2 Se O3and Na2 Te O3was used as electrolyte. The influences of preparation conditions,such as deposition voltage,water bath temperature,deposition time,Molar ratio of Cd,Te and Se,on the open circuit voltage of the sample under simulated sunlight were investigated. The investigations show that the CdSexTeythin film reached the highest open circuit voltage of 0. 464 1 V when the preparation condition of voltage is 3. 0 V,the water bath temperature is 50 ℃,the deposition time is 30 min and the n（ Cd） ∶ n（ Te） ∶ n（ Se） = 5. 6∶ 1∶ 1.The X-ray diffraction（ XRD） shows that the CdSexTeythin film contains Se, the grain sizes of the CdSexTeysample in three main diffraction peaks are 43. 07,44. 56 and 44. 03 nm,respectively. The energy dispersive analysis（ EDS） indicates that the mass fraction of Cd,Te and Se are 6. 53%,6. 25%and 14. 52%,and the atomic fraction of Cd,Te and Se are 1. 68%,1. 42% and 5. 32%,respectively. The normalization of the atomic percentage of Cd is obtained,x is 3. 17（ where Se2-is 0. 15 and Se is 3. 02） and y is 0. 85 in the CdSexTeyformula.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第5期382-388,共7页
Semiconductor Technology
基金
国家自然科学基金资助项目(61264007)
广西科学研究与技术开发计划课题资助项目(桂科重1298002-3)
关键词
电化学共沉积
CdSexTey
薄膜
开路电压
光电性能
electrochemical deposition
CdSexTey
thin film
open circuit voltage
photoelectric property
