摘要
采用RF-PECVD法在低温低功率密度下制备了p型nc-Si∶H薄膜,并系统地研究了硼掺杂对薄膜微结构及光电性能的影响。结果表明:由于"硼掺杂效应",随着掺硼比的增大,nc-Si∶H薄膜的晶化率逐渐降低,晶粒尺寸减小,薄膜的择优取向由[111]变为[220];光学带隙逐渐减小,电导率则先升后降;本实验中薄膜的最优掺杂比为0.3%。以优化后的p型nc-Si∶H薄膜做窗口层,SHJ太阳电池的性能得到明显改善,获得了效率为14.1%的电池。
p-type nc-Si∶ H films were prepared by plasma-enhanced chemical vapor deposition method at low temperature and low power density. The infuence of boron doping on the structural,optical and electronic properties of nc-Si∶ H films were systematically studied. The results show that when the boron doping ratio increasing,the crystalline volume fraction and the grain size decrease monotonously due to the ＂ doping effect of boron ＂,and the preferential growth orientation of nanocrystallites changes from[111]to [220]direction. The optical band gap of films reduces with the increase of boron doping ratio.The dark conductivity increases first and then decreases rapidly. The optimum boron doping ratio was proven to be 0. 3% in this work. The peformance of SHJ solar cells was significantly improved by employing the optimized p type nc-Si∶ H films as emitter layers. A SHJ solar cell with an efficiency of 14.1% was obtained.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2015年第4期933-938,共6页
Journal of Synthetic Crystals
基金
国家高技术研究发展计划(863计划)(2012AA050301)
河北省教育厅科研计划(Z2010304)
