摘要
制备了一种新型的具有高调制带宽的1 053 nm超辐射发光二极管(SLD).利用光荧光(PL)测试分析了不同温度、不同生长速率对SLD芯片外延材料质量的影响,优化了In Ga As/Ga As量子阱的生长温度与生长速率.分析了SLD模块的光电特性随温度与注入电流的变化关系.研究结果表明,SLD输出波长随温度的漂移系数为0.35 nm/℃,其输出波长随注入电流的漂移对温度并不敏感.在25℃、100 m A注入电流下SLD的-3 d B调制带宽达到1.7 GHz,尾纤输出功率2.5 m W,相应的光谱半宽为24 nm,光谱波纹为0.15 d B.
A high speed 1 053 nm superluminescent diode （SLD） with ridge-waveguide structure has been fabricated. By optimizing of the growth parameters such as temperature, growth rate, epitaxial materials with excellent crystal quali- ty were attained. The photoelectric characteristics of the SLD depended on temperature and driver current were analyzed. The coefficient of the wavelength shift with temperature was 0.35 nm/℃. The wavelength of the SLD shift with driver current insensitive to the temperature. A - 3 dB cutoff frequency of 1.7 GHz was obtained at a DC bias current of 100 mA and 25 ℃ ,corresponding to 2.5 mW output power from single mode fiber （SMF） with spectral modulation of less than 0.15 dB and spectral width of 24 nm.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2015年第2期218-223,共6页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(11304405)
重庆大学机械传动国家重点实验室开放课题(SKLMT-KFKT-201419)
重庆市科技攻关计划(CSTC2012gg-gjhz50001
CSTC2013jj B0023)
重庆市教育委员会科技项目(KJ132209)
重庆大学大型仪器设备开放基金(201412150103
201412150104
201412150105)~~
